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| MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half-wave, silicon gate-controlled devices are needed. Features http://onsemi.com * * * * * * * * Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80C High Surge Current Capability - 100 Amperes Rugged, Economical TO-220AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design High Immunity to dv/dt - 100 V/msec Minimum at 125C Pb-Free Packages are Available* SCRs 12 AMPERES RMS 400 thru 800 VOLTS G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12LD MCR12LM MCR12LN On-State RMS Current (180 Conduction Angles; TC = 80C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 80C) Forward Average Gate Power (t = 8.3 ms, TC = 80C) Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 41 5.0 0.5 2.0 -40 to 125 -40 to 150 A A A2sec W W A C C 1 2 3 4 Value Unit V 1 2 3 TO-220AB CASE 221A-09 STYLE 3 A Y WW x G AKA AY WW MCR12LxG AKA = Assembly Location = Year = Work Week = D, M, or N = Pb-Free Package = Diode Polarity PIN ASSIGNMENT Cathode Anode Gate Anode ORDERING INFORMATION Device MCR12LD MCR12LDG MCR12LM MCR12LMG MCR12LN MCR12LNG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2005 Preferred devices are recommended choices for future use and best overall value. 1 December, 2005 - Rev. 2 Publication Order Number: MCR12L/D MCR12LD, MCR12LM, MCR12LN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit C/W C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 24 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latch Current (VD = 12 V, Ig = 20 mA) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Critical Rate of Rise of On-State Current IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA 2. Indicates Pulse Test: Pulse Width v 1.0 ms, Duty Cycle v 2%. dv/dt di/dt 100 - 250 - - 50 V/ms A/ms VTM IGT IH IL VGT - 2.0 4.0 6.0 0.5 - 4.0 10 12 0.65 2.2 8.0 20 30 0.8 V mA mA mA V TJ = 25C TJ = 125C IDRM, IRRM - - - - 0.01 2.0 mA Symbol Min Typ Max Unit http://onsemi.com 2 MCR12LD, MCR12LM, MCR12LN Voltage Current Characteristic of SCR + Current Anode + VTM on state IRRM at VRRM IH Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode - + Voltage IDRM at VDRM Forward Blocking Region (off state) 10 9 GATE TRIGGER CURRENT (mA) 8 7 6 5 4 3 2 1 0 -40 -25 -10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 1. Typical Gate Trigger Current versus Junction Temperature Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 100 100 10 IL , LATCHING CURRENT (mA) 5.0 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 I H , HOLDING CURRENT (mA) 10 1.0 -40 -25 -10 1.0 -40 -25 -10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 3. Typical Holding Current versus Junction Temperature Figure 4. Typical Latching Current versus Junction Temperature http://onsemi.com 3 MCR12LD, MCR12LM, MCR12LN P (AV), AVERAGE POWER DISSIPATION (WATTS) 125 TC, CASE TEMPERATURE ( C) 120 115 110 105 100 dc 95 = 30 90 0 1 2 3 60 90 180 11 12 5 7 9 10 4 6 8 IT(RMS), RMS ON-STATE CURRENT (AMP) = CONDUCTION ANGLE 20 18 16 = CONDUCTION ANGLE 14 = 30 90 180 dc 12 10 8 6 4 2 0 0 1 TJ = 125C 2 3 4 5 6 7 8 9 10 11 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 12 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation 100 70 50 30 20 I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 7.0 5.0 3.0 2.0 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 0.5 1.5 2.0 2.5 1.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.0 Figure 7. Typical On-State Characteristics http://onsemi.com 4 MCR12LD, MCR12LM, MCR12LN PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 3: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MCR12L/D |
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